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LPDDR4
The next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market.
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LPDDR4 – Perfect partner 4 your mobile
Product Description
Overall, the new LPDDR4 interface will provide 50 percent higher performance than the fastest LPDDR3 or DDR3 memory.Also, it consumes approximately 40 percent less energy at 1.1 volts.With the new chip, Samsung will focus on the premium mobile market including large screen UHD smartphones, tablets and ultra-slim notebooks that offer four times the resolution of full-HD imaging, and also on high-performance network systems.
Product comparison: LPDDR4 vs LPDDR2 & 3
Feature
Samsung LPDDR4 features:
- 2channel composition per die
- 8 internal banks for each channel
- Internal VREF and VREF training
- FIFO based write/read training
- LVSTL (Low Voltage Swing Terminated Logic) IO
- VSSQ Termination
| VDD1 / VDD2 / VDDQ | 1.8V / 1.1V / 1.1V |
|---|---|
| Double Data Rate architecture | 2 data transfers per clock cycle |
| Burst Length | 16, 32 (OTF) |
| Burst type | Sequential |
| No DLL | CK to DQS is not synchronized |
Related Documents
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Why eMMC validation is needed
White paper 2013-04-01
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Advanced Mobile DRAM:LPDDR3
Brochure 2013-04-01
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Samsung_smart_Memory_Brochure
Brochure 2013-12-03
