Skip navigation



Reveal all that your devices can do

As the 3rd generation of mobile DRAM incorporating state-of-the-art semiconductor memory technology, Samsung LPDDR3 offers the most advanced performance in the highest density.

With LPDDR3, our customers can bring out the true potential of their smartphones, tablets, and other mobile devices.

Product Description

Meet market demand for mobile speed

LPDDR3 performs at the highest level for mobile DRAM, transferring data at up to 2133 megabits per second (Mbps) per pin.That rate is approximately twice as fast as conventional LPDDR2 DRAM.And, it provides a data transmission rate up to 17.0 gigabytes per second (GB/s) with 64 I/O in a single package in 1.2V low voltage.

Gain additional power savings by moving from a dual-die package to a monolithic chip, keeping the same total density.This move will enable an overall improvement of up to 70 percent in power efficiency at the component level.


Our LPDDR3 is designed to extend the life of a seven-hour battery by about 45 minutes during typical mobile operation.For standby power, the savings are even more dramatic.For example, Samsung’s LPDDR3 can add up to three days of standby battery life for a smartphone.That is a 23 percent improvement over LPDDR1, increasing from 12.5 days to 15.4 days.

Samsung LPDDR3 features:

  • Edge-aligned data output and center-aligned data input
  • Differential clock inputs (CK and CK) and data strobes (DQS and DQS)
  • 8 internal banks for concurrent operation
  • Configurable Drive Strength
  • Partial Array Self Refresh and Temperature Compensated Self Refresh
  • Write Leveling / CA Calibration
  • On-Die Termination using ODT pin
VDD1 / VDD2 / VDDQ / VDDCA 1.8V / 1.2V / 1.2V / 1.2V (HSUL_12 compatible inputs)
Double Data Rate architecture 2 data transfers per clock cycle
Burst Length 8
Burst type Sequential
No DLL CK to DQS is not synchronized

Related Documents

Application Devices

  • Select a Smart Phone
  • Select a Tablet
  • Select a Feature Phone